HfO₂-based ferroelectrics: From enhancing performance, material design, to applications

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed storage, and low energy consumption fulfill rapid developments of big data, Internet Things, artificial intelligence. Hafnia (HfO2)-based materials have attracted significant interest advantages complementary-metal–oxide–semiconductor (CMOS) compatibility, large coercive voltage, superior ferroelectricity at an ultra-thin thickness. The comparable that traditional perovskite size advantage HfO2 result fascinating storage performance, which can be readily applicable fields integrated non-volatile memories. This Review provides a comprehensive overview recent HfO2-based ferroelectrics with attention origin ferroelectricity, performance modulation, achievements material. Moreover, potential solutions existing challenges associated discussed detail, including wake-up effect, long-term fatigue behavior, imprint challenges, pave way obtaining ferroelectric devices long service life high stability. Finally, range applications these new is presented summarized, include neuromorphic systems. intends present state-of-the-art highlight current possible applications, future opportunities act as update intriguing provide guidance researchers design optimization devices.